Bitte melden Sie sich an um selbst Rezensionen oder Kommentare zu erstellen.
Zitieren Sie diese Publikation
Mehr Zitationsstile
- bitte auswählen -
%0 Conference Paper
%1 conf/essderc/KwongMC12
%A Kwong, K. C.
%A Mok, Philip K. T.
%A Chan, Mansun
%B ESSDERC
%D 2012
%I IEEE
%K dblp
%P 101-104
%T Geometry based resistance model for phase change memory.
%U http://dblp.uni-trier.de/db/conf/essderc/essderc2012.html#KwongMC12
%@ 978-1-4673-1707-8
@inproceedings{conf/essderc/KwongMC12,
added-at = {2017-06-02T00:00:00.000+0200},
author = {Kwong, K. C. and Mok, Philip K. T. and Chan, Mansun},
biburl = {https://www.bibsonomy.org/bibtex/2fcf9248c7ffb1eb97a8471aa053f55c9/dblp},
booktitle = {ESSDERC},
crossref = {conf/essderc/2012},
ee = {https://doi.org/10.1109/ESSDERC.2012.6343343},
interhash = {aa26076a6ea264a4199ed9182ab3a0c5},
intrahash = {fcf9248c7ffb1eb97a8471aa053f55c9},
isbn = {978-1-4673-1707-8},
keywords = {dblp},
pages = {101-104},
publisher = {IEEE},
timestamp = {2019-10-17T12:39:51.000+0200},
title = {Geometry based resistance model for phase change memory.},
url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2012.html#KwongMC12},
year = 2012
}
