Article,
A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput.
K. Takeuchi, Y. Kameda, S. Fujimura, H. Otake, K. Hosono, H. Shiga, Y. Watanabe, T. Futatsuyama, Y. Shindo, M. Kojima, M. Iwai, M. Shirakawa, M. Ichige, K. Hatakeyama, S. Tanaka, T. Kamei, J. Fu, A. Cernea, Y. Li, M. Higashitani, G. Hemink, S. Sato, K. Oowada, S. Lee, N. Hayashida, J. Wan, J. Lutze, S. Tsao, M. Mofidi, K. Sakurai, N. Tokiwa, H. Waki, Y. Nozawa, K. Kanazawa, and S. Ohshima.IEEE J. Solid State Circuits, 42 (1): 219-232 (2007)
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- 219-232
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- https://doi.org/10.1109/JSSC.2006.888299
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%1 journals/jssc/TakeuchiKFOHSWF07
%A Takeuchi, Ken
%A Kameda, Yasushi
%A Fujimura, Susumu
%A Otake, Hiroyuki
%A Hosono, Koji
%A Shiga, Hitoshi
%A Watanabe, Yoshihisa
%A Futatsuyama, Takuya
%A Shindo, Yoshihiko
%A Kojima, Masatsugu
%A Iwai, Makoto
%A Shirakawa, Masanobu
%A Ichige, Masayuki
%A Hatakeyama, Kazuo
%A Tanaka, Shinichi
%A Kamei, Teruhiko
%A Fu, Jia-Yi
%A Cernea, Adi
%A Li, Yan
%A Higashitani, Masaaki
%A Hemink, Gertjan
%A Sato, Shinji
%A Oowada, Ken
%A Lee, Shih-Chung
%A Hayashida, Naoki
%A Wan, Jun
%A Lutze, Jeffrey
%A Tsao, Shouchang
%A Mofidi, Mehrdad
%A Sakurai, Kiyofumi
%A Tokiwa, Naoya
%A Waki, Hiroko
%A Nozawa, Yasumitsu
%A Kanazawa, Kazuhisa
%A Ohshima, Shigeo
%D 2007
%J IEEE J. Solid State Circuits
%K dblp
%N 1
%P 219-232
%T A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput.
%U http://dblp.uni-trier.de/db/journals/jssc/jssc42.html#TakeuchiKFOHSWF07
%V 42
@article{journals/jssc/TakeuchiKFOHSWF07,
added-at = {2023-09-14T00:00:00.000+0200},
author = {Takeuchi, Ken and Kameda, Yasushi and Fujimura, Susumu and Otake, Hiroyuki and Hosono, Koji and Shiga, Hitoshi and Watanabe, Yoshihisa and Futatsuyama, Takuya and Shindo, Yoshihiko and Kojima, Masatsugu and Iwai, Makoto and Shirakawa, Masanobu and Ichige, Masayuki and Hatakeyama, Kazuo and Tanaka, Shinichi and Kamei, Teruhiko and Fu, Jia-Yi and Cernea, Adi and Li, Yan and Higashitani, Masaaki and Hemink, Gertjan and Sato, Shinji and Oowada, Ken and Lee, Shih-Chung and Hayashida, Naoki and Wan, Jun and Lutze, Jeffrey and Tsao, Shouchang and Mofidi, Mehrdad and Sakurai, Kiyofumi and Tokiwa, Naoya and Waki, Hiroko and Nozawa, Yasumitsu and Kanazawa, Kazuhisa and Ohshima, Shigeo},
biburl = {https://www.bibsonomy.org/bibtex/284f745bf9b7cea76c4b20e5e0ffd35d9/dblp},
ee = {https://doi.org/10.1109/JSSC.2006.888299},
interhash = {c87375b5b49ba62ded46e2874148fef1},
intrahash = {84f745bf9b7cea76c4b20e5e0ffd35d9},
journal = {IEEE J. Solid State Circuits},
keywords = {dblp},
number = 1,
pages = {219-232},
timestamp = {2024-04-08T10:42:49.000+0200},
title = {A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput.},
url = {http://dblp.uni-trier.de/db/journals/jssc/jssc42.html#TakeuchiKFOHSWF07},
volume = 42,
year = 2007
}