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Disambiguation of "Hosono, Koji"

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A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput.

, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , and . IEEE J. Solid State Circuits, 42 (1): 219-232 (2007)

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Koji Kameo

Koji Onoda

Koji Ota

Tomoko Kojima

Hajime Kojima

 

Other publications of authors with the same name

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 39 other author(s). IEEE J. Solid State Circuits, 55 (1): 178-188 (2020)A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput., , , , , , , , , and 25 other author(s). IEEE J. Solid State Circuits, 42 (1): 219-232 (2007)A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput., , , , , , , , , and 25 other author(s). ISSCC, page 507-516. IEEE, (2006)A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology., , , , , , , , , and 15 other author(s). IEEE J. Solid State Circuits, 41 (1): 161-169 (2006)A 125-mm2 1-Gb NAND flash memory with 10-MByte/s program speed., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 37 (11): 1493-1501 (2002)A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 42 other author(s). ISSCC, page 210-212. IEEE, (2019)A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology., , , , , , , , , and 54 other author(s). ISSCC, page 336-338. IEEE, (2018)A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology., , , , , , , , , and 27 other author(s). ISSCC, page 430-431. IEEE, (2008)A 130-mm/2, 256-Mbit NAND flash with shallow trench isolation technology., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 34 (11): 1536-1543 (1999)30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology., , , , , , , , , and 49 other author(s). ISSCC, page 428-430. IEEE, (2021)