%0 Conference Paper %1 conf/irps/MaassRAR20 %A Maaß, Sebastian %A Reisinger, Hans %A Aichinger, Thomas %A Rescher, Gerald %B IRPS %D 2020 %I IEEE %K dblp %P 1-6 %T Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. %U http://dblp.uni-trier.de/db/conf/irps/irps2020.html#MaassRAR20 %@ 978-1-7281-3199-3

@inproceedings{conf/irps/MaassRAR20, added-at = {2021-10-14T00:00:00.000+0200}, author = {Maaß, Sebastian and Reisinger, Hans and Aichinger, Thomas and Rescher, Gerald}, biburl = {https://www.bibsonomy.org/bibtex/24513ed21891ee5b84d09965a94383475/dblp}, booktitle = {IRPS}, crossref = {conf/irps/2020}, ee = {https://doi.org/10.1109/IRPS45951.2020.9129232}, interhash = {237195c2b0811705f00a51b8a2876c0d}, intrahash = {4513ed21891ee5b84d09965a94383475}, isbn = {978-1-7281-3199-3}, keywords = {dblp}, pages = {1-6}, publisher = {IEEE}, timestamp = {2024-04-10T16:56:46.000+0200}, title = {Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.}, url = {http://dblp.uni-trier.de/db/conf/irps/irps2020.html#MaassRAR20}, year = 2020 }