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Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.

, , , и . IRPS, стр. 1-6. IEEE, (2020)

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Hans Reisinger

Hans Reisinger

Hans Reisinger

Hans Reisinger

Hans Reisinger

 

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Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs., , , и . IRPS, стр. 1-6. IEEE, (2020)A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs., , , , , , , , , и 2 other автор(ы). IRPS, стр. 3. IEEE, (2024)Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors., , , , , , , , , и 1 other автор(ы). IRPS, стр. 2. IEEE, (2018)Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs., , , , и . IRPS, стр. 3. IEEE, (2018)From Device Aging Physics to Automated Circuit Reliability Sign Off., , , , , , и . IRPS, стр. 1-12. IEEE, (2019)Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI., , , , и . ESSDERC, стр. 218-221. IEEE, (2018)Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs., , , , , , , , и . IRPS, стр. 1-10. IEEE, (2023)A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation., , , , , и . IRPS, стр. 1-7. IEEE, (2021)Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs., , , , , и . IRPS, стр. 3. IEEE, (2022)Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability., , , , и . IRPS, стр. 1-7. IEEE, (2023)