The measurement of the occupied trap density of states (DOS) is important for optimization of organic bulk heterojunction solar cells. We demonstrate a direct method for obtaining it from the trap related peak in capacitance-voltage characteristics under different levels of illumination, and its correlation with the dark current density-voltage characteristics. We use the method to measure the parameters of DOS, occupied trap distribution, and its temperature dependence for poly(3-hexathiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) based solar cells. The total occupied trap concentration is approximately 7 × 1015 cm−3 with a standard deviation for a truncated Gaussian distribution varying between 32 and 44 meV in the temperature range of 310–270 K within a total Gaussian DOS with a standard deviation of 92 meV.
Description
Direct determination of defect density of states in organic bulk heterojunction solar cells
%0 Journal Article
%1 :/content/aip/journal/apl/109/11/10.1063/1.4962827
%A Verma, Upkar K.
%A Tripathi, Durgesh C.
%A Mohapatra, Y. N.
%D 2016
%J Applied Physics Letters
%K Density P3HT PCBM States Traps capacitance characteristics of voltage
%N 11
%R http://dx.doi.org/10.1063/1.4962827
%T Direct determination of defect density of states in organic bulk heterojunction solar cells
%U http://scitation.aip.org/content/aip/journal/apl/109/11/10.1063/1.4962827
%V 109
%X The measurement of the occupied trap density of states (DOS) is important for optimization of organic bulk heterojunction solar cells. We demonstrate a direct method for obtaining it from the trap related peak in capacitance-voltage characteristics under different levels of illumination, and its correlation with the dark current density-voltage characteristics. We use the method to measure the parameters of DOS, occupied trap distribution, and its temperature dependence for poly(3-hexathiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) based solar cells. The total occupied trap concentration is approximately 7 × 1015 cm−3 with a standard deviation for a truncated Gaussian distribution varying between 32 and 44 meV in the temperature range of 310–270 K within a total Gaussian DOS with a standard deviation of 92 meV.
@article{:/content/aip/journal/apl/109/11/10.1063/1.4962827,
abstract = {The measurement of the occupied trap density of states (DOS) is important for optimization of organic bulk heterojunction solar cells. We demonstrate a direct method for obtaining it from the trap related peak in capacitance-voltage characteristics under different levels of illumination, and its correlation with the dark current density-voltage characteristics. We use the method to measure the parameters of DOS, occupied trap distribution, and its temperature dependence for poly(3-hexathiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) based solar cells. The total occupied trap concentration is approximately 7 × 1015 cm−3 with a standard deviation for a truncated Gaussian distribution varying between 32 and 44 meV in the temperature range of 310–270 K within a total Gaussian DOS with a standard deviation of 92 meV.},
added-at = {2016-09-19T11:18:29.000+0200},
author = {Verma, Upkar K. and Tripathi, Durgesh C. and Mohapatra, Y. N.},
biburl = {https://www.bibsonomy.org/bibtex/26dce0fb5700840f196c3142a2ccfb393/danies},
description = {Direct determination of defect density of states in organic bulk heterojunction solar cells},
doi = {http://dx.doi.org/10.1063/1.4962827},
eid = {113301},
interhash = {4792aead0f7a00e713e350a8aa97f85f},
intrahash = {6dce0fb5700840f196c3142a2ccfb393},
journal = {Applied Physics Letters},
keywords = {Density P3HT PCBM States Traps capacitance characteristics of voltage},
number = 11,
timestamp = {2016-09-19T11:18:29.000+0200},
title = {Direct determination of defect density of states in organic bulk heterojunction solar cells},
url = {http://scitation.aip.org/content/aip/journal/apl/109/11/10.1063/1.4962827},
volume = 109,
year = 2016
}