We describe a percolation based model for the dielectric breakdown of
metal-oxide-semiconductor capacitors where the dielectric constant
varies randomly throughout the oxide layer. We consider the SiO2 oxide
within a rectangular lattice framework, and the breakdown is simulated
as a cluster growth depending process where the local electric field is
a function of the randomly varying permissivity, The effects of the bias
polarity, oxide film thickness and electric field strength are
discussed. We obtain that the slope of the Weibull distribution
increases with the oxide thickness, which agrees with experimental
results. Additionally, the oxide reliability as function of the electric
field intensity can only be simulated using a percolative model if the
electric field is considered to be local, i.e,, the oxide is a conductor
locally. (C) 2002 Published by Elsevier Science B.V.
%0 Journal Article
%1 WOS:000175238100001
%A Sombra, SS
%A Costa, UMS
%A Freire, VN
%A de Vasconcelos, EA
%A da Silva, EF
%C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
%D 2002
%I ELSEVIER SCIENCE BV
%J PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS
%K SiO2 breakdown; devices; dynamic model} oxide; percolation semiconductor {dielectric
%N 3-4
%P 351-359
%R 10.1016/S0378-4371(01)00615-X
%T A percolation based dielectric breakdown model with randomic changes in
the dielectric constant
%V 305
%X We describe a percolation based model for the dielectric breakdown of
metal-oxide-semiconductor capacitors where the dielectric constant
varies randomly throughout the oxide layer. We consider the SiO2 oxide
within a rectangular lattice framework, and the breakdown is simulated
as a cluster growth depending process where the local electric field is
a function of the randomly varying permissivity, The effects of the bias
polarity, oxide film thickness and electric field strength are
discussed. We obtain that the slope of the Weibull distribution
increases with the oxide thickness, which agrees with experimental
results. Additionally, the oxide reliability as function of the electric
field intensity can only be simulated using a percolative model if the
electric field is considered to be local, i.e,, the oxide is a conductor
locally. (C) 2002 Published by Elsevier Science B.V.
@article{WOS:000175238100001,
abstract = {We describe a percolation based model for the dielectric breakdown of
metal-oxide-semiconductor capacitors where the dielectric constant
varies randomly throughout the oxide layer. We consider the SiO2 oxide
within a rectangular lattice framework, and the breakdown is simulated
as a cluster growth depending process where the local electric field is
a function of the randomly varying permissivity, The effects of the bias
polarity, oxide film thickness and electric field strength are
discussed. We obtain that the slope of the Weibull distribution
increases with the oxide thickness, which agrees with experimental
results. Additionally, the oxide reliability as function of the electric
field intensity can only be simulated using a percolative model if the
electric field is considered to be local, i.e,, the oxide is a conductor
locally. (C) 2002 Published by Elsevier Science B.V.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
author = {Sombra, SS and Costa, UMS and Freire, VN and de Vasconcelos, EA and da Silva, EF},
biburl = {https://www.bibsonomy.org/bibtex/29f735fd8b3b2625ad57342cc0f17b5b7/ppgfis_ufc_br},
doi = {10.1016/S0378-4371(01)00615-X},
interhash = {805513a4425075d6858ded485c4f5ace},
intrahash = {9f735fd8b3b2625ad57342cc0f17b5b7},
issn = {0378-4371},
journal = {PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS},
keywords = {SiO2 breakdown; devices; dynamic model} oxide; percolation semiconductor {dielectric},
number = {3-4},
pages = {351-359},
publisher = {ELSEVIER SCIENCE BV},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {A percolation based dielectric breakdown model with randomic changes in
the dielectric constant},
tppubtype = {article},
volume = 305,
year = 2002
}