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Defect characterization in graphene and carbon nanotubes using Raman spectroscopy

, , , and . PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 368 (1932): 5355-5377 (2010)
DOI: 10.1098/rsta.2010.0213

Abstract

This review discusses advances that have been made in the study of defect-induced double-resonance processes in nanographite, graphene and carbon nanotubes, mostly coming from combining Raman spectroscopic experiments with microscopy studies and from the development of new theoretical models. The disorder-induced peak frequencies and intensities are discussed, with particular emphasis given to how the disorder-induced features evolve with increasing amounts of disorder. We address here two systems, ion-bombarded graphene and nanographite, where disorder is represented by point defects and boundaries, respectively. Raman spectroscopy is used to study the `atomic structure' of the defect, making it possible, for example, to distinguish between zigzag and armchair edges, based on selection rules of phonon scattering. Finally, a different concept is discussed, involving the effect that defects have on the lineshape of Raman-allowed peaks, owing to local electron and phonon energy renormalization. Such effects can be observed by near-field optical measurements on the G' feature for doped single-walled carbon nanotubes.

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