Article,
A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps.
H. Rücker, B. Heinemann, W. Winkler, R. Barth, J. Borngräber, J. Drews, G. Fischer, A. Fox, T. Grabolla, U. Haak, D. Knoll, F. Korndörfer, A. Mai, S. Marschmeyer, P. Schley, D. Schmidt, J. Schmidt, M. Schubert, K. Schulz, B. Tillack, D. Wolansky, and Y. Yamamoto.IEEE J. Solid State Circuits, 45 (9): 1678-1686 (2010)
Meta data
- BibTeX key
- journals/jssc/RuckerHWBBDFFGHKKMMSSSSSTWY10
- entry type
- article
- year
- 2010
- journal
- IEEE J. Solid State Circuits
- number
- 9
- pages
- 1678-1686
- volume
- 45
- ee
- https://doi.org/10.1109/JSSC.2010.2051475
- url
- http://dblp.uni-trier.de/db/journals/jssc/jssc45.html#RuckerHWBBDFFGHKKMMSSSSSTWY10
Tags
Users
Comments and Reviewsshow / hide
Cite this publication
More citation styles
- please select -%0 Journal Article
%1 journals/jssc/RuckerHWBBDFFGHKKMMSSSSSTWY10
%A Rücker, Holger
%A Heinemann, Bernd
%A Winkler, Wolfgang
%A Barth, Rainer
%A Borngräber, Johannes
%A Drews, Jürgen
%A Fischer, Gerhard G.
%A Fox, Alexander
%A Grabolla, Thomas
%A Haak, Ulrich
%A Knoll, Dieter
%A Korndörfer, Falk
%A Mai, Andreas
%A Marschmeyer, Steffen
%A Schley, Peter
%A Schmidt, Detlef
%A Schmidt, J.
%A Schubert, Markus Andreas
%A Schulz, K.
%A Tillack, Bernd
%A Wolansky, Dirk
%A Yamamoto, Yuji
%D 2010
%J IEEE J. Solid State Circuits
%K
%N 9
%P 1678-1686
%T A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps.
%U http://dblp.uni-trier.de/db/journals/jssc/jssc45.html#RuckerHWBBDFFGHKKMMSSSSSTWY10
%V 45
@article{journals/jssc/RuckerHWBBDFFGHKKMMSSSSSTWY10,
added-at = {2023-12-13T00:09:05.000+0100},
author = {Rücker, Holger and Heinemann, Bernd and Winkler, Wolfgang and Barth, Rainer and Borngräber, Johannes and Drews, Jürgen and Fischer, Gerhard G. and Fox, Alexander and Grabolla, Thomas and Haak, Ulrich and Knoll, Dieter and Korndörfer, Falk and Mai, Andreas and Marschmeyer, Steffen and Schley, Peter and Schmidt, Detlef and Schmidt, J. and Schubert, Markus Andreas and Schulz, K. and Tillack, Bernd and Wolansky, Dirk and Yamamoto, Yuji},
biburl = {https://www.bibsonomy.org/bibtex/25dc5fc260204555030bf3eda23f29925/admin},
ee = {https://doi.org/10.1109/JSSC.2010.2051475},
interhash = {5f742be54bafba95dfcf0ea93dba0090},
intrahash = {5dc5fc260204555030bf3eda23f29925},
journal = {IEEE J. Solid State Circuits},
keywords = {},
number = 9,
pages = {1678-1686},
timestamp = {2023-12-13T00:09:05.000+0100},
title = {A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps.},
url = {http://dblp.uni-trier.de/db/journals/jssc/jssc45.html#RuckerHWBBDFFGHKKMMSSSSSTWY10},
volume = 45,
year = 2010
}