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330 GHz and Gate Delays Below 3 ps.

H. Rücker, B. Heinemann, W. Winkler, R. Barth, J. Borngräber, J. Drews, G. Fischer, A. Fox, T. Grabolla, U. Haak, D. Knoll, F. Korndörfer, A. Mai, S. Marschmeyer, P. Schley, D. Schmidt, J. Schmidt, M. Schubert, K. Schulz, B. Tillack, D. Wolansky, and Y. Yamamoto. IEEE J. Solid State Circuits, 45 (9): 1678-1686 (2010)

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Bernd Heinemann

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Recombination current measurements in the space charge region of MOS field-induced pn junctions.R. Sorge, and B. Heinemann. Microelectron. Reliab., 41 (6): 789-795 (2001)A Terahertz Detector Array in a SiGe HBT Technology.R. Hadi, J. Grzyb, B. Heinemann, and U. Pfeiffer. IEEE J. Solid State Circuits, 48 (9): 2002-2010 (2013)A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications.T. Bücher, J. Grzyb, P. Hillger, H. Rücker, B. Heinemann, and U. Pfeiffer. IEEE J. Solid State Circuits, 57 (7): 2024-2034 (2022)Subclasses of Self-Modifying Nets.B. Heinemann. Selected Papers from the First and the Second European Workshop on Application and Theory of Petri Nets, volume 52 of Informatik-Fachberichte, page 187-192. Springer, (1981)Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology.D. Knoll, S. Lischke, L. Zimmermann, B. Heinemann, D. Micusík, P. Ostrovskyy, G. Winzer, M. Kroh, R. Barth, T. Grabolla and 15 other author(s). OFC, page 1-3. IEEE, (2014)SiGe BiCMOS technology for mm-wave systems.H. Rücker, and B. Heinemann. ISOCC, page 266-268. IEEE, (2012)Comments on I. Futo, T. Gergely.B. Heinemann. International Working Conference on Model Realism, page 47-48. Springer, (1982)A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS.P. Hillger, R. Jain, J. Grzyb, L. Mavarani, B. Heinemann, G. MacGrogan, P. Mounaix, T. Zimmer, and U. Pfeiffer. ISSCC, page 418-420. IEEE, (2018)A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging.P. Hillger, R. Jain, J. Grzyb, W. Forster, B. Heinemann, G. MacGrogan, P. Mounaix, T. Zimmer, and U. Pfeiffer. IEEE J. Solid State Circuits, 53 (12): 3599-3612 (2018)A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology.Y. Borokhovych, H. Gustat, B. Tillack, B. Heinemann, Y. Lu, W. Kuo, X. Li, R. Krithivasan, and J. Cressler. ESSCIRC, page 263-266. IEEE, (2005)

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Disambiguation of "Heinemann, Bernd"

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A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps.

Please choose a person to relate this publication to

Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Heinemann, Bernd"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps.

Please choose a person to relate this publication to

Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
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APA
Chicago
DIN 1505
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A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps.