%0 Journal Article %1 journals/tie/SolerCBMRGMRRS17 %A Soler, Victor %A Cabello, Maria %A Berthou, Maxime %A Montserrat, Josep %A Rebollo, José %A Godignon, Philippe %A Mihaila, Andrei %A Rogina, Maria R. %A Rodriguez, Alberto %A Sebastián, Javier %D 2017 %J IEEE Trans. Ind. Electron. %K dblp %N 11 %P 8962-8970 %T High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. %U http://dblp.uni-trier.de/db/journals/tie/tie64.html#SolerCBMRGMRRS17 %V 64

@article{journals/tie/SolerCBMRGMRRS17, added-at = {2021-08-03T00:00:00.000+0200}, author = {Soler, Victor and Cabello, Maria and Berthou, Maxime and Montserrat, Josep and Rebollo, José and Godignon, Philippe and Mihaila, Andrei and Rogina, Maria R. and Rodriguez, Alberto and Sebastián, Javier}, biburl = {https://www.bibsonomy.org/bibtex/2a81145941edaa9102ecc5179ae4c1b2e/dblp}, ee = {https://doi.org/10.1109/TIE.2017.2723865}, interhash = {6514fe8f8eeb00bf8c6ac602eb7138f2}, intrahash = {a81145941edaa9102ecc5179ae4c1b2e}, journal = {IEEE Trans. Ind. Electron.}, keywords = {dblp}, number = 11, pages = {8962-8970}, timestamp = {2024-04-08T10:28:01.000+0200}, title = {High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.}, url = {http://dblp.uni-trier.de/db/journals/tie/tie64.html#SolerCBMRGMRRS17}, volume = 64, year = 2017 }