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Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing., , , , and . ESSDERC, page 385-388. IEEE, (2014)High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide., , , , , , , , , and . IEEE Trans. Ind. Electron., 64 (11): 8962-8970 (2017)IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process., , , , , and . Microelectron. J., 35 (8): 659-666 (2004)Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications., , , , , , and . Microelectron. J., 38 (3): 406-415 (2007)High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs., , , , , and . ESSCIRC, page 427-430. IEEE, (2013)4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits., , , , and . ESSDERC, page 103-106. IEEE, (2013)SiC Integrated Circuit Control Electronics for High-Temperature Operation., , , , , , , and . IEEE Trans. Ind. Electron., 62 (5): 3182-3191 (2015)Enhanced power cycling capability of SiC Schottky diodes using press pack contacts., , , , and . Microelectron. Reliab., 52 (9-10): 2250-2255 (2012)Self-heating experimental study of 600V PT-IGBTs under low dissipation energies., , , , , and . Microelectron. J., 35 (10): 841-847 (2004)60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes., , , , , , , and . Sensors, 21 (3): 942 (2021)