High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width.
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%0 Conference Paper
%1 conf/vlsic/HashemiABBEONPM15
%A Hashemi, Pouya
%A Ando, Takashi
%A Balakrishnan, Karthik
%A Bruley, John
%A Engelmann, Sebastian U.
%A Ott, John A.
%A Narayanan, Vijay
%A Park, D.-G.
%A Mo, Renee T.
%A Leobandung, Effendi
%B VLSIC
%D 2015
%I IEEE
%K dblp
%P 16-
%T High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width.
%U http://dblp.uni-trier.de/db/conf/vlsic/vlsic2015.html#HashemiABBEONPM15
%@ 978-4-86348-502-0
@inproceedings{conf/vlsic/HashemiABBEONPM15,
added-at = {2023-09-30T00:00:00.000+0200},
author = {Hashemi, Pouya and Ando, Takashi and Balakrishnan, Karthik and Bruley, John and Engelmann, Sebastian U. and Ott, John A. and Narayanan, Vijay and Park, D.-G. and Mo, Renee T. and Leobandung, Effendi},
biburl = {https://www.bibsonomy.org/bibtex/20437e7e825773057a3c5a2f0b85e35d4/dblp},
booktitle = {VLSIC},
crossref = {conf/vlsic/2015},
ee = {https://doi.org/10.1109/VLSIC.2015.7231382},
interhash = {ad5354b66a37af1e4a292b94189a0fe9},
intrahash = {0437e7e825773057a3c5a2f0b85e35d4},
isbn = {978-4-86348-502-0},
keywords = {dblp},
pages = {16-},
publisher = {IEEE},
timestamp = {2024-04-10T15:33:51.000+0200},
title = {High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width.},
url = {http://dblp.uni-trier.de/db/conf/vlsic/vlsic2015.html#HashemiABBEONPM15},
year = 2015
}
