%0 Journal Article %1 BEN99 %A Benabbas, T. %A Androussi, Y. %A Lefebvre, A. %D 1999 %J J.~Appl.~Phys. %K III-V analysis; arsenide; compounds; diffusion dots; element finite gallium indium internal island nucleation; quantum semiconductor semiconductors; stresses; structure; surface %N 4 %P 1945--1950 %T A finite-element study of strain fields in vertically aligned InAs islands in GaAs %V 86

@article{BEN99, added-at = {2009-03-03T17:19:04.000+0100}, author = {Benabbas, T. and Androussi, Y. and Lefebvre, A.}, biburl = {https://www.bibsonomy.org/bibtex/2c1d344da34d8c7334015e1bd5273ab3e/bronckobuster}, interhash = {d99a971f91a9252c7e8a0ae4a8100534}, intrahash = {c1d344da34d8c7334015e1bd5273ab3e}, journal = {J.~Appl.~Phys.}, keywords = {III-V analysis; arsenide; compounds; diffusion dots; element finite gallium indium internal island nucleation; quantum semiconductor semiconductors; stresses; structure; surface}, nota = {RK:}, number = 4, pages = {1945--1950}, timestamp = {2009-03-03T17:19:09.000+0100}, title = {A finite-element study of strain fields in vertically aligned InAs islands in GaAs}, volume = 86, year = 1999 }