Аннотация
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed.
Пользователи данного ресурса
Пожалуйста,
войдите в систему, чтобы принять участие в дискуссии (добавить собственные рецензию, или комментарий)