Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.
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%0 Journal Article
%1 journals/mr/TartarinLSLMBRR17
%A Tartarin, Jean-Guy
%A Lazar, O.
%A Saugnon, D.
%A Lambert, Benoit
%A Moreau, C.
%A Bouexière, C.
%A Romain-Latu, E.
%A Rousseau, K.
%A David, A.
%A Roux, J.-L.
%D 2017
%J Microelectron. Reliab.
%K dblp
%P 344-349
%T Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.
%U http://dblp.uni-trier.de/db/journals/mr/mr76.html#TartarinLSLMBRR17
%V 76-77
@article{journals/mr/TartarinLSLMBRR17,
added-at = {2020-02-22T00:00:00.000+0100},
author = {Tartarin, Jean-Guy and Lazar, O. and Saugnon, D. and Lambert, Benoit and Moreau, C. and Bouexière, C. and Romain-Latu, E. and Rousseau, K. and David, A. and Roux, J.-L.},
biburl = {https://www.bibsonomy.org/bibtex/21c141ce48513514c471b3c74d58d8d9f/dblp},
ee = {https://doi.org/10.1016/j.microrel.2017.07.057},
interhash = {fdb0d2c489d787ec3d07d6e17cd29c77},
intrahash = {1c141ce48513514c471b3c74d58d8d9f},
journal = {Microelectron. Reliab.},
keywords = {dblp},
pages = {344-349},
timestamp = {2020-02-25T13:24:46.000+0100},
title = {Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr76.html#TartarinLSLMBRR17},
volume = {76-77},
year = 2017
}
