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Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.

J. Tartarin, O. Lazar, D. Saugnon, B. Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, and J. Roux. Microelectron. Reliab., (2017)

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Benoît Cordonnier

Non-Newtonian effects in silicate liquids and crystal bearing melts: implication for magma dynamicsB. Cordonnier. Uni München, (2009)

David Benoit

Benoit Courmont

Benoît Mindzeng

Barbara Benoit

Other publications of authors with the same name

Qualification of 50 V GaN on SiC technology for RF power amplifiers.P. van der Wel, T. Rödle, B. Lambert, H. Blanck, and M. Dammann. Microelectron. Reliab., 53 (9-11): 1439-1443 (2013)Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.M. Rzin, N. Labat, N. Malbert, A. Curutchet, L. Brunel, and B. Lambert. Microelectron. Reliab., 55 (9-10): 1672-1676 (2015)Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.L. Brunel, N. Malbert, A. Curutchet, N. Labat, and B. Lambert. ESSDERC, page 270-273. IEEE, (2012)Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification.B. Lambert, J. Thorpe, R. Behtash, B. Schauwecker, F. Bourgeois, H. Jung, J. Bataille, P. Mezenge, C. Gourdon, C. Ollivier and 2 other author(s). Microelectron. Reliab., 52 (9-10): 2200-2204 (2012)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.B. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, and G. Pataut. Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Proton induced trapping effect on space compatible GaN HEMTs.A. Stocco, S. Gerardin, D. Bisi, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso, J. Grünenpütt, B. Lambert, H. Blanck and 1 other author(s). Microelectron. Reliab., 54 (9-10): 2213-2216 (2014)Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.Z. Gao, F. Chiocchetta, C. Santi, N. Modolo, F. Rampazzo, M. Meneghini, G. Meneghesso, E. Zanoni, H. Blanck, H. Stieglauer and 8 other author(s). IRPS, page 51-1. IEEE, (2022)Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.L. Brunel, B. Lambert, P. Mezenge, J. Bataille, D. Floriot, J. Grünenpütt, H. Blanck, D. Carisetti, Y. Gourdel, N. Malbert and 2 other author(s). Microelectron. Reliab., 53 (9-11): 1450-1455 (2013)Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing.J. Pomeroy, M. Uren, B. Lambert, and M. Kuball. Microelectron. Reliab., 55 (12): 2505-2510 (2015)Reliability of high voltage/high power L/S-band Hbt technology.B. Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, H. Blanck, and C. Moreau. Microelectron. Reliab., 50 (9-11): 1543-1547 (2010)