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Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems, , , , , и . CoRR, (2007)A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches, , , , , и . CoRR, (2008)A design flow for inductively degenerated LNAs., , и . ICECS, стр. 615-618. IEEE, (2004)Numerical modeling of advanced semiconductor devices., , , , , , , , , и . IBM J. Res. Dev., 36 (2): 208-232 (1992)A 0.83-2.5-GHz continuously tunable quadrature VCO., , , и . IEEE J. Solid State Circuits, 40 (12): 2620-2627 (2005)Sensitivity Analysis for Device Design., , , , и . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 6 (5): 879-885 (1987)TCAD predictions of hot-electron injection in p-type LDMOS transistors., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 86-89. IEEE, (2019)3D TCAD modeling of NO2CNT FET sensors., , , , , , и . ESSDERC, стр. 222-225. IEEE, (2018)Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures., , , , , , , , и . ICECS, стр. 793-796. IEEE, (2018)Automatic Compensation of the Voltage Attenuation in 3-D Interconnection Based on Capacitive Coupling., , , , , и . IEEE J. Solid State Circuits, 46 (2): 498-506 (2011)