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Current pulse generator for multilevel cell programming of innovative PCM., , , , and . ICICDT, page 1-4. IEEE, (2015)Phase Change and Magnetic Memories for Solid-State Drive Applications., , , , and . Proc. IEEE, 105 (9): 1790-1811 (2017)Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement., , , , , , , , , and 6 other author(s). ESSDERC, page 225-228. IEEE, (2022)Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction., , , , , , , , , and 3 other author(s). ESSDERC, page 233-236. IEEE, (2022)1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation., , , , , , , , , and 6 other author(s). MIXDES, page 1-6. IEEE, (2023)PCM-Trace: Scalable Synaptic Eligibility Traces with Resistivity Drift of Phase-Change Materials., , , , , , , and . ISCAS, page 1-5. IEEE, (2021)Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements., , , , , , , and . IRPS, page 1. IEEE, (2015)OTS selector devices: Material engineering for switching performance., , , , , , , , and . ICICDT, page 113-116. IEEE, (2018)Optimal programming with voltage-controlled temperature profile to reduce SET state distribution dispersion in PCM., , , , , and . ICECS, page 482-485. IEEE, (2014)High temperature reliability of μtrench Phase-Change Memory devices., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 1928-1931 (2012)