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TD-LTE applications using a Class-F CMOS power amplifier.

M. Tsai, C. Lin, P. Chen, T. Chang, C. Tseng, L. Lin, C. Beale, B. Tseng, B. Tenbroek, C. Chiu, G. Dehng, and G. Chien. ISSCC, page 216-217. IEEE, (2017)

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Dirk Bernard

Bernard Willkofer

Bernard Andreae

Bernard Broermann

Bernard Schmidtmann

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10.3 A 12nm CMOS RF Transceiver Supporting 4G/5G UL MIMO.M. Tsai, S. Yang, C. Yu, P. Chen, T. Wu, M. Hassan, C. Chen, C. Wang, Y. Huang, L. Hung and 12 other author(s). ISSCC, page 176-178. IEEE, (2020)RFIC and RF Module for 5G Applications.M. Tsai, S. Yang, C. Yu, P. Chen, T. Wu, M. Hassan, C. Chen, C. Wang, Y. Huang, L. Huang and 12 other author(s). VLSI-DAT, page 1-3. IEEE, (2020)10.6 A 4G/5G Cellular Transmitter in 12nm FinFET with Harmonic Rejection.M. Tsai, C. Tseng, K. Tsai, S. Andrabi, P. Huang, F. Beffa, Y. Chen, and B. Tenbroek. ISSCC, page 182-184. IEEE, (2020)13.1 A fully integrated multimode front-end module for GSM/EDGE/TD-SCDMA/TD-LTE applications using a Class-F CMOS power amplifier.M. Tsai, C. Lin, P. Chen, T. Chang, C. Tseng, L. Lin, C. Beale, B. Tseng, B. Tenbroek, C. Chiu and 2 other author(s). ISSCC, page 216-217. IEEE, (2017)24.3 A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio.Y. Lien, E. Klumperink, B. Tenbroek, J. Strange, and B. Nauta. ISSCC, page 412-413. IEEE, (2017)7.3 A 40nm low-power transceiver for LTE-A Carrier Aggregation.C. Chiu, S. Yen, C. Yu, T. Wu, C. Chou, S. Tseng, C. Shen, Y. Lu, H. Chen, S. Yang and 9 other author(s). ISSCC, page 130-131. IEEE, (2017)Enhanced-Selectivity High-Linearity Low-Noise Mixer-First Receiver With Complex Pole Pair Due to Capacitive Positive Feedback.Y. Lien, E. Klumperink, B. Tenbroek, J. Strange, and B. Nauta. IEEE J. Solid State Circuits, 53 (5): 1348-1360 (2018)Direct-Conversion WCDMA Transmitter with 163dBc/Hz Noise at 190MHz Offset.C. Jones, B. Tenbroek, P. Fowers, C. Beghein, J. Strange, F. Beffa, and D. Nalbantis. ISSCC, page 336-607. IEEE, (2007)Single-Chip Tri-Band WCDMA/HSDPA Transceiver without External SAW Filters and with Integrated TX Power Control.B. Tenbroek, J. Strange, D. Nalbantis, C. Jones, P. Fowers, S. Brett, C. Beghein, and F. Beffa. ISSCC, page 202-203. IEEE, (2008)A receiver for WCDMA/EDGE mobile phones with inductorless front-end in 65nm CMOS.F. Beffa, T. Sin, A. Tanzil, D. Ivory, B. Tenbroek, J. Strange, and W. Ali-Ahmad. ISSCC, page 370-372. IEEE, (2011)

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13.1 A fully integrated multimode front-end module for GSM/EDGE/TD-SCDMA/TD-LTE applications using a Class-F CMOS power amplifier.

Please choose a person to relate this publication to

Dirk Bernard

Bernard Willkofer

Bernard Andreae

Bernard Broermann

Bernard Schmidtmann

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Tenbroek, Bernard"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML 13.1 A fully integrated multimode front-end module for GSM/EDGE/TD-SCDMA/TD-LTE applications using a Class-F CMOS power amplifier.

Please choose a person to relate this publication to

Dirk Bernard

Bernard Willkofer

Bernard Andreae

Bernard Broermann

Bernard Schmidtmann

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

13.1 A fully integrated multimode front-end module for GSM/EDGE/TD-SCDMA/TD-LTE applications using a Class-F CMOS power amplifier.