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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes.

H. Yu, T. Gong, P. Yuan, Y. Wang, Z. Gao, X. Xu, Y. Sun, R. Cheng, J. Gao, J. Li, B. Chen, and Q. Luo. Sci. China Inf. Sci., (December 2023)

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Jing Gong

Weihua Gong

Ping Gong

Mengxiong Gong

Pu Gong

Other publications of authors with the same name

Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks.P. Jiang, K. Xu, J. Yu, Y. Xu, P. Yuan, Y. Wang, Y. Chen, Y. Ding, S. Lv, Z. Dang and 4 other author(s). Sci. China Inf. Sci., (February 2023)Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications.Q. Ding, T. Gong, J. Yu, X. Xu, X. Li, H. Lv, J. Yang, Q. Luo, P. Yuan, F. Zhang and 1 other author(s). Sci. China Inf. Sci., (2021)A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique.J. Yin, C. Dou, D. Dong, J. Yu, X. Xu, Q. Luo, T. Gong, L. Tai, P. Yuan, X. Xue and 2 other author(s). IEICE Electron. Express, 16 (12): 20190201 (2019)First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip.T. Gong, L. Xu, W. Wei, P. Jiang, P. Yuan, B. Nie, Y. Huang, Y. Wang, Y. Yang, J. Gao and 8 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes.H. Yu, T. Gong, P. Yuan, Y. Wang, Z. Gao, X. Xu, Y. Sun, R. Cheng, J. Gao, J. Li and 2 other author(s). Sci. China Inf. Sci., (December 2023)A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme.C. Liu, J. Yang, P. Jiang, Q. Wang, D. Zhang, T. Gong, Q. Ding, Y. Zhao, Q. Luo, X. Xue and 2 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 28 (11): 2469-2473 (2020)16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pA) Self-Selective Cells.Y. Ding, J. Yang, Y. Liu, J. Gao, Y. Wang, P. Jiang, S. Lv, Y. Chen, B. Wang, W. Wei and 5 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Disambiguation of "Gong, Tiancheng"

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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes.

Please choose a person to relate this publication to

Jing Gong

Weihua Gong

Ping Gong

Mengxiong Gong

Pu Gong

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Gong, Tiancheng"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes.

Please choose a person to relate this publication to

Jing Gong

Weihua Gong

Ping Gong

Mengxiong Gong

Pu Gong

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes.