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Impact of within-wafer process variability on radiation response., , , , , , , and . Microelectron. J., 42 (6): 883-888 (2011)Demonstration of improvement of specific on-resistance versus breakdown voltage tradeoff for low-voltage power LDMOS., , , , , , , , , and 1 other author(s). Microelectron. J., (2019)Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs., , , , , , , and . Microelectron. Reliab., (2017)Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology., , , , , , and . Microelectron. Reliab., (2017)A High-Performance and Low-Cost Single-Event Multiple-Node-Upsets Resilient Latch Design., , , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 30 (12): 1867-1877 (2022)A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application., , , , , , , and . Int. J. Circuit Theory Appl., 51 (8): 3938-3948 (August 2023)A charge pump system with new regulation and clocking scheme., , , , , , and . IEICE Electron. Express, 16 (4): 20190005 (2019)Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET., , , , , and . IEICE Electron. Express, 17 (7): 20200001 (2020)Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer., , , , , , and . IEICE Electron. Express, 16 (21): 20190454 (2019)Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs., , , , , , and . Microelectron. Reliab., 53 (2): 259-264 (2013)