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A Low Power Inductorless LNA With Double Gm Enhancement in 130 nm CMOS., , и . IEEE J. Solid State Circuits, 47 (5): 1094-1103 (2012)Design-oriented model for short-channel MOS transistors based on inversion charge., , , , , , , и . LASCAS, стр. 1-4. IEEE, (2023)Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge., , , , , , , , и . IEEE Access, (2022)Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies., , , , , , , и . ISCAS, стр. 1-5. IEEE, (2023)Fully integrated power management unit (PMU) using NMOS Low Dropout regulators., , , , , , , и . EUROCON, стр. 1445-1452. IEEE, (2013)60µW SMR BAW oscillator designed in 65nm CMOS technology., , , , , , и . ISCAS, стр. 1456-1459. IEEE, (2008)Effect of RF Front-End Parameters on UWB-OFDM Receiver Performances in Presence of Adjacent Channel Interferers., , , и . ICECS, стр. 802-805. IEEE, (2006)An Ultra-Wideband Impulse-Radio Communication Method and Transceiver., и . GLOBECOM, стр. 1-5. IEEE, (2009)Efficiency enhancement using adaptive bias control for 60GHz power amplifier., , и . NEWCAS, стр. 1-4. IEEE, (2015)A high-performance CMOS-SOI antenna switch for the 2.5-5-GHz band., , , и . IEEE J. Solid State Circuits, 38 (7): 1279-1283 (2003)