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High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes., , , , , , , , , and 1 other author(s). IRPS, page 1-4. IEEE, (2023)The effects of radiation on the terrestrial operation of SiC MOSFETs., , , , , , and . IRPS, page 2. IEEE, (2018)Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs., , , , , , , , , and . IRPS, page 8. IEEE, (2022)Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations., , , , and . IRPS, page 1-4. IEEE, (2023)Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination., , , , and . IRPS, page 1-5. IEEE, (2019)Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation., , , and . IRPS, page 1-4. IEEE, (2020)Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode., , , , and . BCICTS, page 310-313. IEEE, (2023)Reliability studies of SiC vertical power MOSFETs., , , , , , , , , and . IRPS, page 2. IEEE, (2018)