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Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET.

U. Kovac, D. Reid, C. Millar, G. Roy, S. Roy, and A. Asenov. Microelectron. Reliab., 48 (8-9): 1572-1575 (2008)

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Silvia Asen

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Hans Asen

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Asen Kalojanov

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Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET.U. Kovac, D. Reid, C. Millar, G. Roy, S. Roy, and A. Asenov. Microelectron. Reliab., 48 (8-9): 1572-1575 (2008)Special section reliability and variability of devices for circuits and systems.A. Asenov, U. Schlichtmann, C. Tan, H. Wong, and X. Zhou. Microelectron. Reliab., 54 (6-7): 1057 (2014)Ab-initio Coulomb Scattering in Atomistic Device Simulation.C. Arokianathan, J. Davies, and A. Asenov. VLSI Design, 8 (1-4): 331-335 (1998)Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs.J. Watling, Y. Zhao, A. Asenov, and J. Barker. VLSI Design, 13 (1-4): 169-173 (2001)RF Performance of Si/SiGe MODFETs: A Simulation Study.S. Roy, A. Asenov, S. Babiker, J. Barker, and S. Beaumont. VLSI Design, 8 (1-4): 325-330 (1998)A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices.C. Arokianathan, A. Asenov, and J. Davies. VLSI Design, 6 (1-4): 243-246 (1998)Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices.A. Asenov, A. Brown, S. Roy, and J. Barker. VLSI Design, 6 (1-4): 91-95 (1998)Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation - Part I: CNFET Transistor Optimization.R. Chen, L. Chen, J. Liang, Y. Cheng, S. Elloumi, J. Lee, K. Xu, V. Georgiev, K. Ni, P. Debacker and 2 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 30 (4): 432-439 (2022)Statistical NBTI-effect prediction for ULSI circuits.T. Tang, A. Murray, B. Cheng, and A. Asenov. ISCAS, page 2494-2497. IEEE, (2010)ICMAT 2011 - Reliability and variability of semiconductor devices and ICs.A. Asenov, U. Schlichtmann, C. Tan, H. Wong, and X. Zhou. Microelectron. Reliab., 52 (8): 1531 (2012)

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Disambiguation of "Asenov, Asen"

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Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET.

Please choose a person to relate this publication to

Silvia Asen

Michaela Asen

Hans Asen

Florian Asen

Asen Kalojanov

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Asenov, Asen"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET.

Please choose a person to relate this publication to

Silvia Asen

Michaela Asen

Hans Asen

Florian Asen

Asen Kalojanov

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET.