( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.

, , , , , , , , и . ESSDERC, стр. 107-110. IEEE, (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Kenji Kurata

Kenji Kurata

Kenji Kamino

Kenji Uemura

Kenji Yamamoto

 

Другие публикации лиц с тем же именем

A Study on Performance and Stability of Current Control Systems by Using Multi-Level Inverters., , и . ICM, стр. 1-6. IEEE, (2021)A realization of high-performance motion control systems by applying multi-level converters., , , и . IECON, стр. 2656-2662. IEEE, (2014)Experimental study on performance improvement of force control by using multi-level converters., , и . IECON, стр. 5223-5228. IEEE, (2015)Time-Delay Compensation by Communication Disturbance Observer for Bilateral Teleoperation Under Time-Varying Delay., , , , и . IEEE Trans. Ind. Electron., 57 (3): 1050-1062 (2010)Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity., , , , , , , , , и 2 other автор(ы). Microelectron. Reliab., 55 (2): 407-410 (2015)Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise., , , , , , , , , и 2 other автор(ы). Microelectron. Reliab., 51 (4): 746-750 (2011)Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer., , , , , , , , и . Microelectron. Reliab., 52 (4): 688-691 (2012)A design method of time-delay systems with communication disturbance observer by using Pade approximation.. AMC, стр. 1-6. IEEE, (2012)A simplified structure for robustness enhancement of time-delay systems., и . AMC, стр. 512-517. IEEE, (2010)Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors., , , , , , и . Microelectron. Reliab., 51 (5): 879-884 (2011)