Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

An MTJ-based non-volatile flip-flop for high-performance SoC., , , , , and . I. J. Circuit Theory and Applications, 42 (4): 394-406 (2014)Transistor sizing for reliable domino logic design in dual threshold voltage technologies., , and . ACM Great Lakes Symposium on VLSI, page 133-138. ACM, (2001)Low-swing clock domino logic incorporating dual supply and dual threshold voltages., , and . DAC, page 467-472. ACM, (2002)Noise-aware power optimization for on-chip interconnect., , , , and . ISLPED, page 108-113. ACM, (2000)A 90° phase-shift DLL with closed-loop DCC for high-speed mobile DRAM interface., , and . IEEE Trans. Consumer Electronics, 56 (4): 2400-2405 (2010)MTJ based non-volatile flip-flop in deep submicron technology., , , , , and . ISOCC, page 424-427. IEEE, (2011)SRAM Operational Mismatch Corner Model for Efficient Circuit Design and Yield Analysis., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 64-I (8): 2063-2072 (2017)Offset-Cancellation Sensing-Circuit-Based Nonvolatile Flip-Flop Operating in Near-Threshold Voltage Region., , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 66-I (8): 2963-2972 (2019)Pre-Charged Local Bit-Line Sharing SRAM Architecture for Near-Threshold Operation., , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 64-I (10): 2737-2747 (2017)SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit., , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 62-I (6): 1538-1545 (2015)