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Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions.

, , , and . IEICE Electron. Express, 11 (18): 20140679 (2014)

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Advanced semiconductor lasers., , and . Proc. IEEE, 80 (3): 383-397 (1992)Integrated optics approach for advanced semiconductor lasers., and . Proc. IEEE, 75 (11): 1472-1487 (1987)Si-Photonics-Based Layer-to-Layer Coupler Toward 3D Optical Interconnection., , , , , , and . IEICE Trans. Electron., 101-C (7): 501-508 (2018)GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO2/semiconductor reflectors., , , , , , and . IEICE Electron. Express, 1 (17): 540-544 (2004)Athermal Wavelength Filters toward Optical Interconnection to LSIs., , , , and . IEICE Trans. Electron., 95-C (2): 229-236 (2012)Theoretical analysis of the damping effect on a transistor laser., , , and . IEICE Electron. Express, 9 (23): 1792-1798 (2012)Orbital Angular Momentum Mux/Demux Module using Vertically Curved Si Waveguides., , , , , , and . OFC, page 1-3. IEEE, (2019)Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions., , , and . IEICE Electron. Express, 11 (18): 20140679 (2014)Broadband Si waveguide loop mirror with curved directional coupler., , , , , and . OECC/PSC, page 1-3. IEEE, (2019)GaInAsP/InP distributed reflector laser with phase-shifted DFB and quantum-wire DBR sections., , , , and . IEICE Electron. Express, 2 (11): 356-361 (2005)