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Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited).

T. Narita, D. Kikuta, K. Ito, T. Shoji, T. Mori, S. Yamaguchi, Y. Kimoto, K. Tomita, M. Kanechika, T. Kondo, T. Uesugi, J. Kojima, J. Suda, Y. Nagasato, S. Ikeda, H. Watanabe, M. Kosaki, and T. Oka. IRPS, page 1-10. IEEE, (2023)

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Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage.M. Okada, R. Takaki, D. Kikuta, J. Ao, and Y. Ohno. IEICE Trans. Electron., 89-C (7): 1042-1046 (2006)Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited).T. Narita, D. Kikuta, K. Ito, T. Shoji, T. Mori, S. Yamaguchi, Y. Kimoto, K. Tomita, M. Kanechika, T. Kondo and 8 other author(s). IRPS, page 1-10. IEEE, (2023)A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET.D. Kikuta, J. Ao, J. Matsuda, and Y. Ohno. IEICE Trans. Electron., 89-C (7): 1031-1036 (2006)Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure.D. Kikuta, J. Ao, and Y. Ohno. IEICE Trans. Electron., 88-C (4): 683-689 (2005)

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Disambiguation of "Kikuta, Daigo"

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Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited).

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Disambiguation of "Kikuta, Daigo"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited).

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Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited).