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4-Mb MOSFET-selected phase-change memory experimental chip., , , , , , , , , and 6 other author(s). ESSCIRC, page 207-210. IEEE, (2004)Design of resistive non-volatile memories for rad-hard applications., , , , and . ISCAS, page 1594-1597. IEEE, (2016)A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 46 (1): 52-63 (2011)A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage., , , , , , , , , and 6 other author(s). IEEE J. Solid State Circuits, 44 (1): 217-227 (2009)4-Mb MOSFET-selected μtrench phase-change memory experimental chip., , , , , , , , , and 6 other author(s). IEEE J. Solid State Circuits, 40 (7): 1557-1565 (2005)A Multi-Level-Cell Bipolar-Selected Phase-Change Memory., , , , , , , , , and 6 other author(s). ISSCC, page 428-429. IEEE, (2008)SET and RESET pulse characterization in BJT-selected phase-change memories., , , , , , and . ISCAS (2), page 1270-1273. IEEE, (2005)Ultra-low voltage VLSIs for energy efficient systems., , , , and . ISSCC, page 514-515. IEEE, (2011)A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput., , , , , , , , , and 3 other author(s). ISSCC, page 268-269. IEEE, (2010)