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Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique., , , , and . Microelectron. J., 38 (4-5): 610-614 (2007)A new SIMPLORER model for single-electron transistors., , , , , and . Microelectron. J., 38 (8-9): 894-899 (2007)Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates., , , , , , , and . Microelectron. J., 37 (4): 363-370 (2006)Evaluating NDVI Data Continuity Between SPOT-VEGETATION and PROBA-V Missions for Operational Yield Forecasting in North African Countries., , , , , , , , , and 4 other author(s). IEEE Trans. Geosci. Remote. Sens., 54 (2): 795-804 (2016)Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications., , , , , , and . Microelectron. J., 37 (11): 1399-1403 (2006)Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixels., , , , , , and . SSD, page 1-4. IEEE, (2013)Remote Sensing Based Yield Estimation in a Stochastic Framework - Case Study of Durum Wheat in Tunisia., , , , and . Remote. Sens., 5 (2): 539-557 (2013)Macro-modeling for the compact simulation of single electron transistor using SIMPLORER., , , , and . Microelectron. J., 38 (12): 1156-1160 (2007)Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator., , , , , and . Microelectron. J., 40 (3): 543-546 (2009)Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes., , , and . Microelectron. Reliab., 55 (8): 1169-1173 (2015)