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A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links.

, , , , , and . IEEE J. Solid State Circuits, 29 (9): 1014-1021 (September 1994)

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Hochgeschwindigkeits-Schaltungen in Silizium-Bipolartechnologie / High-speed integrated circuits in silicon bipolar technology.. it Inf. Technol., 34 (4): 209-219 (1992)High-gain SiGe transimpedance amplifier array for a 12×10 Gb/s parallel optical-fiber link., , , , , and . IEEE J. Solid State Circuits, 38 (1): 4-12 (2003)A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits., and . IEEE J. Solid State Circuits, 37 (9): 1184-1197 (2002)Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology., and . IEEE J. Solid State Circuits, 38 (2): 184-191 (2003)Modeling substrate effects in the design of high-speed Si-bipolar ICs., , and . IEEE J. Solid State Circuits, 31 (10): 1493-1501 (1996)High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links., , , , , , and . IEEE J. Solid State Circuits, 35 (9): 1260-1265 (2000)46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology., , , , and . IEEE J. Solid State Circuits, 31 (4): 481-486 (1996)A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO., , , and . IEEE J. Solid State Circuits, 47 (9): 1974-1980 (2012)A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links., , , , , and . IEEE J. Solid State Circuits, 29 (9): 1014-1021 (September 1994)Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s., and . IEEE J. Solid State Circuits, 31 (8): 1076-1090 (1996)