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Novel Circuit Synthesis Technique Using Short Channel GaAs Fets Giving Reduced Intermodulation Distortion.

, , and . ISCAS, page 1348-1351. IEEE, (1995)

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Device Circuit Interaction in the Common Source Amplifier., , , and . ISCAS, page 241-244. IEEE, (1994)Analysis and Comparison of Marchand and Transformer Baluns Applied in GaAs., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 69 (11): 4278-4282 (2022)GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications., and . BCICTS, page 300-303. IEEE, (2023)An Edge-Coupled Marchand Balun With Partial Ground for Excellent Balance in 0.13 μm SiGe Technology., , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 68 (1): 226-230 (2021)Distortion Compensation of Multi-Mesfet Circuits., , and . ISCAS, page 189-192. IEEE, (1994)Common-Gate Load-Pull With Q-Band Application., , and . IEEE J. Solid State Circuits, 47 (10): 2282-2290 (2012)Novel Circuit Synthesis Technique Using Short Channel GaAs Fets Giving Reduced Intermodulation Distortion., , and . ISCAS, page 1348-1351. IEEE, (1995)GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications.. BCICTS, page 1-8. IEEE, (2021)New Method for Comprehensive Characterisation of MES/MOD/MOS FET's., and . ISCAS, page 1093-1096. IEEE, (1993)Compensation of 2nd Harmonic Distortion in a 4-FET Linearised Transconductor Circuit., and . ISCAS, page 1089-1092. IEEE, (1993)