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A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT., , , , , , , , , и 1 other автор(ы). DRC, стр. 1-2. IEEE, (2020)Commercialization and reliability of 600 V GaN power switches., , , , , , , , , и 7 other автор(ы). IRPS, стр. 6. IEEE, (2015)Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth., , , , , , и . DRC, стр. 1-2. IEEE, (2024)Ultra-high speed modulation-doped field-effect transistors: a tutorial review., , и . Proc. IEEE, 80 (4): 494-518 (1992)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , и 4 other автор(ы). IRPS, стр. 1-2. IEEE, (2021)Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction., , , , , , и . DRC, стр. 149-150. IEEE, (2019)Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology., , , , , , , , и . IEEE J. Solid State Circuits, 34 (9): 1239-1245 (1999)Short-Circuit Capability with GaN HEMTs : Invited., , , , , , , и . IRPS, стр. 1-7. IEEE, (2022)Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-5. IEEE, (2019)Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects., , , , , , , , , и 3 other автор(ы). IRPS, стр. 5. IEEE, (2024)