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Dynamic GTS Allocation Scheme in IEEE 802.15.4 by Multi-Factor., , , и . IIH-MSP, стр. 457-460. IEEE, (2012)Signal Control Switching Applied on Large Array Devices' Layouts., , , , , , , , и . ICCE-TW, стр. 1-2. IEEE, (2021)Optimizing Device Metal Routing Layouts by the Simulation Tool., , , , , , , , , и 4 other автор(ы). ICCE-Taiwan, стр. 219-220. IEEE, (2023)Signal Control Switching for Improving Large Array Devices' ESD Performances., , , , , , , , , и 1 other автор(ы). ICCE-TW, стр. 1-2. IEEE, (2020)A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector., , , , , , , , , и 2 other автор(ы). ISSCC, стр. 306-307. IEEE, (2023)Gate Voltages Impacting on Latch-up Measurements., , , , , , , , , и 2 other автор(ы). ICCE-TW, стр. 75-76. IEEE, (2022)Transmission Line Pulse Width Impacting on Device Performances., , , , , , , , , и 3 other автор(ы). ICCE-Taiwan, стр. 227-228. IEEE, (2023)A Concise Electrothermal Model to Characterize the Thermal Safe-Operating Area of Power Transistor., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2023)Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection., , , , , , , , , и 1 other автор(ы). IRPS, стр. 2. IEEE, (2022)Bipolar Transistors' Holding Phenomena., , , , , , , , , и 3 other автор(ы). ICCE-Taiwan, стр. 221-222. IEEE, (2023)