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Design and Analysis of a 140-GHz T/R Front-End Module in 22-nm FD-SOI CMOS., , , , and . IEEE J. Solid State Circuits, 57 (5): 1300-1313 (2022)Design of A D-band Transformer-Based Neutralized Class-AB Power Amplifier in Silicon Technologies., , , , , and . NEWCAS, page 1-4. IEEE, (2019)Systematic Design of On-Chip Matching Networks for D-band Circuits., , , , and . NEWCAS, page 1-4. IEEE, (2019)Millimeter-Wave Transceivers for Wireless Communication, Radar, and Sensing : (Invited Paper)., , , , , , , , , and 7 other author(s). CICC, page 1-11. IEEE, (2019)Design of a 10.56-Gb/s 64-QAM Polar Transmitter at 60 GHz in 28-nm CMOS., , , , , , and . IEEE J. Solid State Circuits, 58 (8): 2189-2201 (2023)A Low-Power Reflection-Coefficient Sensor for 28-GHz Beamforming Transmitters in 22-nm FD-SOI CMOS., , , , , , , , and . IEEE J. Solid State Circuits, 56 (12): 3704-3714 (2021)Design of D-Band Transformer-Based Gain-Boosting Class-AB Power Amplifiers in Silicon Technologies., , , , , , and . IEEE Trans. Circuits Syst. I Fundam. Theory Appl., 67-I (5): 1447-1458 (2020)26.4 A Reflection-Coefficient Sensor for 28GHz Beamforming Transmitters in 22nm FD-SOI CMOS., , , , and . ISSCC, page 360-362. IEEE, (2021)A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI., , , , , , and . CICC, page 1-4. IEEE, (2020)