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New Electronic Memory Device Concepts Based on Metal Oxide-Polymer Nanostructures Planer Diodes., , , and . DoCEIS, volume 372 of IFIP Advances in Information and Communication Technology, page 521-526. Springer, (2012)Depletion Based Digital and Analogue Circuits with n-Channel IGZO Thin Film Transistors., , , and . ISCAS, page 1-5. IEEE, (2023)Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories., , , , , and . DoCEIS, volume 372 of IFIP Advances in Information and Communication Technology, page 527-534. Springer, (2012)Recent progress in optoelectronic memristors for neuromorphic and in-memory computation., , , , and . Neuromorph. Comput. Eng., 3 (2): 22002 (June 2023)Reconfigurable Intelligent Surfaces for THz: Hardware Impairments and Switching Technologies., , , , , , , , , and 3 other author(s). CoRR, (2024)Concept paper on novel radio frequency resistive switches., , , , , , and . NANOARCH, page 29:1-29:3. ACM, (2023)Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor., , , and . DoCEIS, volume 372 of IFIP Advances in Information and Communication Technology, page 535-540. Springer, (2012)Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles., , , and . DoCEIS, volume 349 of IFIP Advances in Information and Communication Technology, page 591-595. Springer, (2011)