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300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 55 (9): 2316-2335 (2020)High Output Power and Compact LAN-WDM EADFB Laser TOSA for 4 × 100-Gbit/s/λ 40-km Fiber-Amplifier-Less Transmission., , , , , , , , , and 3 other author(s). OFC, page 1-3. IEEE, (2020)InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage., , , , , and . IEICE Electron. Express, 16 (3): 20181125 (2019)Ultrahigh-Speed Circuits Using Resonant Tunneling Devices., , , , , and . Great Lakes Symposium on VLSI, page 150-153. IEEE Computer Society, (1999)Advantages of SOA Assisted Extended Reach EADFB Laser (AXEL) for Operation at Low Power and with Extended Transmission Reach., , , , , , , , and . IEICE Trans. Electron., 100-C (10): 759-766 (2017)Dispersion tolerance of 100-Gbit/s PAM4 optical link utilizing high-speed avalanche photodiode receiver., , , , , and . IEICE Electron. Express, 15 (16): 20180624 (2018)230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology., , , , , , , and . BCICTS, page 1-4. IEEE, (2020)56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodes., , , , and . OFC, page 1-3. IEEE, (2016)28-Gbit/s 80-km transmission using SOA-assisted extended-reach EADFB laser (AXEL)., , , , , , , , , and 2 other author(s). OFC, page 1-3. IEEE, (2017)Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs., , , and . IEICE Trans. Electron., 89-C (7): 949-953 (2006)