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Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy.

J. Schlipf, J. Frieiro, I. Fischer, C. Serra, J. Schulze, and S. Chiussi. MIPRO, page 37-42. IEEE, (2017)

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Sachin Asaram Ingale

Roman Ingarden

Mirjam Ingargiola

Inga Anita Fischer

Ulrike A Fischer

Other publications of authors with the same name

Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics.D. Weißhaupt, H. Funk, C. Sürgers, G. Fischer, M. Oehme, D. Schwarz, I. Fischer, J. van Slageren, and J. Schulze. MIPRO, page 45-49. IEEE, (2021)Titanium and Nickel as alternative materials for mid Infrared Plasmonic.F. Berkmann, M. Ayasse, F. Mörz, I. Fischer, and J. Schulze. MIPRO, page 36-39. IEEE, (2021)(Si)GeSn nanostructures for optoelectronic device applications.I. Fischer, F. Oliveira, A. Benedetti, S. Chiussi, and J. Schulze. MIPRO, page 1-4. IEEE, (2016)Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing.Y. Kawaguchi, L. Augel, H. Uchida, M. Inoue, J. Schulze, and I. Fischer. MIPRO, page 23-26. IEEE, (2018)Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si.Y. Elogail, F. Berkmann, C. Clausen, I. Fischer, L. Hänel, D. Schwarz, and J. Schulze. Microelectron. J., (2022)Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates.F. Berkmann, L. Augel, M. Schilling, A. Berrier, D. Schwarz, D. Weißhaupt, M. Oehme, J. Schulze, and I. Fischer. MIPRO, page 32-35. IEEE, (2018)Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges.E. Rolseth, A. Blech, I. Fischer, Y. Hashad, R. Koerner, K. Kostecki, A. Kruglov, V. Srinivasan, M. Weiser, T. Wendav and 2 other author(s). MIPRO, page 57-65. IEEE, (2017)Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy.J. Schlipf, J. Frieiro, I. Fischer, C. Serra, J. Schulze, and S. Chiussi. MIPRO, page 37-42. IEEE, (2017)Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001).L. Hänel, Y. Elogail, D. Schwarz, I. Fischer, and J. Schulze. MIPRO, page 27-31. IEEE, (2018)

BibSonomy

Disambiguation of "Fischer, Inga A."

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Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy.

Please choose a person to relate this publication to

Sachin Asaram Ingale

Roman Ingarden

Mirjam Ingargiola

Inga Anita Fischer

Ulrike A Fischer

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Fischer, Inga A."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy.

Please choose a person to relate this publication to

Sachin Asaram Ingale

Roman Ingarden

Mirjam Ingargiola

Inga Anita Fischer

Ulrike A Fischer

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy.