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A 0.2 dBm 225 GHz Frequency Quadrupler with 330° Phase Control in 130 nm SiGe BiCMOS.

, , , , и . ISCAS, стр. 434-437. IEEE, (2022)

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Claudio Testa

Valerio Ketmaier

Alessandro Testa

Giordano Paolo

Giovanni Andrea Testa

 

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170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier., , , , и . IEEE J. Solid State Circuits, 50 (10): 2228-2238 (2015)A 213 GHz 2 dBm Output-Power Frequency Quadrupler with 45 dB Harmonic Suppression in 130 nm SiGe BiCMOS., , , и . ESSCIRC, стр. 447-450. IEEE, (2021)A 0.2 dBm 225 GHz Frequency Quadrupler with 330° Phase Control in 130 nm SiGe BiCMOS., , , , и . ISCAS, стр. 434-437. IEEE, (2022)High-impedance multi-conductor transmission-lines for integrated applications at millimeter-wave frequency., , , , и . SBCCI, стр. 129-135. ACM, (2017)A 130 nm-SiGe-BiCMOS Low-Power Receiver Based on Distributed Amplifier Techniques for Broadband Applications From 140 GHz to 200 GHz., , , и . IEEE Open J. Circuits Syst., (2021)IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 74-77. IEEE, (2019)200 GHz chip-to-chip wireless power transfer., , , и . RWS, стр. 117-120. IEEE, (2018)Analysis and Design of a 60 GHz Fully-Differential Frequency Doubler in 130 nm SiGe BiCMOS., , , и . ISCAS, стр. 1-5. IEEE, (2018)Analysis and Design of a 30- to 220-GHz Balanced Cascaded Single-Stage Distributed Amplifier in 130-nm SiGe BiCMOS., , , и . IEEE J. Solid State Circuits, 53 (5): 1457-1467 (2018)Synthetic Transmission Lines in Cutoff Operation for Wideband High-Impedance DC Supplies., , и . IEEE Trans. Circuits Syst. II Express Briefs, 68 (3): 928-932 (2021)