Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone.

W. Chen, T. Huang, C. Chiu, C. Chang, and K. Hsu. ISSCC, page 436-438. IEEE, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Chun-Nan Kuo

Fang-Chun Kuo

Chun-Chen Hsu

Chun-Ting Hsu

Chun-Ming Hsu

Other publications of authors with the same name

94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone.W. Chen, T. Huang, C. Chiu, C. Chang, and K. Hsu. ISSCC, page 436-438. IEEE, (2018)On-chip ESD protection circuit design with novel substrate-triggered SCR device in sub-quarter-micron CMOS process.M. Ker, and K. Hsu. ISCAS (5), page 529-532. IEEE, (2002)ESD Protection Design for Mixed-Voltage I/O Circuit with Substrate-Triggered Technique in Sub-Quarter-Micron CMOS Process.M. Ker, C. Chuang, K. Hsu, and W. Lo. ISQED, page 331-336. IEEE Computer Society, (2002)Latchup-free ESD protection design with complementary substrate-triggered SCR devices.M. Ker, and K. Hsu. IEEE J. Solid State Circuits, 38 (8): 1380-1392 (2003)Design on Power-Rail ESD Clamp Circuit for 3.3-V I/O Interface by Using Only 1-V/2.5-V Low-Voltage Devices in a 130-nm CMOS Process.M. Ker, W. Chen, and K. Hsu. IEEE Trans. Circuits Syst. I Regul. Pap., 53-I (10): 2187-2193 (2006)

BibSonomy

Disambiguation of "Hsu, Kuo-Chun"