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Improved modeling of isolated EDMOS in advanced CMOS technologies., , , , and . ICICDT, page 25-28. IEEE, (2013)EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region., , , , and . ESSDERC, page 134-137. IEEE, (2015)Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices., , , , , , , , , and 3 other author(s). ESSDERC, page 271-274. IEEE, (2021)A self-sustaining Single Photon Avalanche Diode Model., , , , , , , , , and 5 other author(s). ESSDERC, page 281-284. IEEE, (2022)Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study., , , , , , , , , and 2 other author(s). ESSCIRC, page 143-146. IEEE, (2021)Statistical measurements and Monte-Carlo simulations of DCR in SPADs., , , , , , , , , and 2 other author(s). ESSCIRC, page 193-196. IEEE, (2022)Integration of SPAD in 28nm FDSOI CMOS technology., , , , , , , , and . ESSDERC, page 82-85. IEEE, (2018)Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications., , , and . ESSDERC, page 134-137. IEEE, (2014)Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs., , , , , , , , , and 25 other author(s). ESSDERC, page 144-147. IEEE, (2023)