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Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology.

F. Moradi, G. Panagopoulos, G. Karakonstantis, H. Farkhani, D. Wisland, J. Madsen, H. Mahmoodi, and K. Roy. Microelectron. J., 45 (1): 23-34 (2014)

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Hooman Latifi

Hooman Talebnasab

Hooman Shayani

Hooman Abdollahzadeh Davani

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Tunable Voltage-Mode Subthreshold CMOS Neuron.M. Ronchini, M. Zamani, H. Farkhani, and F. Moradi. ISVLSI, page 252-257. IEEE, (2020)A Novel TFET 8T-SRAM Cell with Improved Noise Margin and Stability.S. Fani, A. Peiravi, H. Farkhani, and F. Moradi. DDECS, page 39-44. IEEE, (2018)Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology.F. Moradi, G. Panagopoulos, G. Karakonstantis, H. Farkhani, D. Wisland, J. Madsen, H. Mahmoodi, and K. Roy. Microelectron. J., 45 (1): 23-34 (2014)A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology.H. Farkhani, A. Peiravi, and F. Moradi. Microelectron. J., 45 (11): 1556-1565 (2014)A Low-Noise High Input Impedance Analog Front-End Design for Neural Recording Implant.H. Huynh, M. Ronchini, A. Rashidi, M. Tohidi, H. Farkhani, and F. Moradi. ICECS, page 887-890. IEEE, (2019)Comparative study of FinFETs versus 22nm bulk CMOS technologies: SRAM design perspective.H. Farkhani, A. Peiravi, J. Madsen, and F. Moradi. SoCC, page 449-454. IEEE, (2014)A 53GΩ@DC Input Impedance Multi-Channel Neural Recording Amplifier with 0.77 μVrms Input-Referred Noise for Deep Brain Implants.H. Huynh, M. Zamani, M. Ronchini, H. Farkhani, and F. Moradi. CICC, page 1-2. IEEE, (2021)Spin-Torque-Nano-Oscillator based neuromorphic computing assisted by laser.H. Farkhani, T. Böhnert, M. Tarequzzaman, D. Costa, A. Jenkins, R. Ferreira, and F. Moradi. DTIS, page 1-5. IEEE, (2019)Energy-Efficient Spintronic-Based Neuromorphic Computing System Using Current Mode Track and Termination Circuit.P. Shafaghi, M. Dolatshahi, and H. Farkhani. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 42 (9): 2915-2923 (September 2023)STT-RAM Energy Reduction Using Self-Referenced Differential Write Termination Technique.H. Farkhani, M. Tohidi, A. Peiravi, J. Madsen, and F. Moradi. IEEE Trans. Very Large Scale Integr. Syst., 25 (2): 476-487 (2017)

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Disambiguation of "Farkhani, Hooman"

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Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology.

Please choose a person to relate this publication to

Hooman Latifi

Hooman Talebnasab

Hooman Shayani

Hooman Abdollahzadeh Davani

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Farkhani, Hooman"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology.

Please choose a person to relate this publication to

Hooman Latifi

Hooman Talebnasab

Hooman Shayani

Hooman Abdollahzadeh Davani

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology.