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Millimeter-Wave Integrated Circuits in 65-nm CMOS., , , and . IEEE J. Solid State Circuits, 43 (9): 1991-2002 (2008)A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio., , , and . ISSCC, page 418-419. IEEE, (2010)220-240-GHz High-Gain Phase Shifter Chain and Power Amplifier for Scalable Large Phased-Arrays., , , , , and . IEEE Access, (2023)V-band balanced resistive mixer in 65-nm CMOS., , and . ESSCIRC, page 360-363. IEEE, (2007)Design of an E-band Doherty Power amplifier., , , , and . PRIME, page 145-148. IEEE, (2018)Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology., , , , and . NORCAS, page 1-5. IEEE, (2017)Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology., , , , , and . ISCAS, page 1-4. IEEE, (2020)Metamorphic HEMT amplifier for K- and Ka-band applications., , , and . ECCTD, page 253-256. IEEE, (2005)Millimeter-wave amplifiers in 65-nm CMOS., , and . ESSCIRC, page 280-283. IEEE, (2007)W-band CMOS amplifiers achieving +10dBm saturated output oower and 7.5dB NF., , , and . ISSCC, page 486-487. IEEE, (2009)