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0.4V SRAM with bit line swing suppression charge share hierarchical bit line scheme.

, , , , and . CICC, page 1-4. IEEE, (2011)

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0.5-V, 150-MHz, bulk-CMOS SRAM with suspended bit-line read scheme., , , , and . ESSCIRC, page 354-357. IEEE, (2010)A 13.8pJ/Access/Mbit SRAM with charge collector circuits for effective use of non-selected bit line charges., , , , , , and . VLSIC, page 60-61. IEEE, (2012)60% Cycle time acceleration, 55% energy reduction, 32Kbit SRAM by auto-selective boost (ASB) scheme for slow memory cells in random variations., , , , , and . ESSCIRC, page 317-320. IEEE, (2012)Energy efficiency degradation caused by random variation in low-voltage SRAM and 26% energy reduction by Bitline Amplitude Limiting (BAL) scheme., , , and . A-SSCC, page 165-168. IEEE, (2011)Highly Energy-Efficient SRAM With Hierarchical Bit Line Charge-Sharing Method Using Non-Selected Bit Line Charges., , , , , , and . IEEE J. Solid State Circuits, 48 (4): 924-931 (2013)0.4V SRAM with bit line swing suppression charge share hierarchical bit line scheme., , , , and . CICC, page 1-4. IEEE, (2011)A 40-nm 256-Kb Sub-10 pJ/Access 8t SRAM with read bitline amplitude limiting (RBAL) scheme., , , , , , , , , and . ISLPED, page 85-90. ACM, (2012)