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Thin germanium dioxide film with a high quality interface formed in a direct neutral beam oxidation process., , , и . ESSDERC, стр. 85-88. IEEE, (2012)III-V-based low power CMOS devices on Si platform., , , , , , , , , и 1 other автор(ы). ICICDT, стр. 1-4. IEEE, (2017)InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform., , , и . IEICE Electron. Express, 11 (16): 20140609 (2014)Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks., , , и . IRPS, стр. 1-4. IEEE, (2021)First demonstration of Ge waveguide platform on Ge-on-insulator for mid-infrared integrated photonics., , и . ECOC, стр. 1-3. IEEE, (2015)SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe., , , , и . OFC, стр. 1-3. IEEE, (2015)Reservoir computing utilizing ferroelectric-gate-insulator FETs and capacitors.. ICICDT, стр. xv. IEEE, (2023)Efficient Optical Modulator by Reverse-Biased III-V/Si Hybrid MOS Capacitor Based on FK Effect and Carrier Depletion., , , и . OFC, стр. 1-3. IEEE, (2019)Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers., , , , , и . 3DIC, стр. 1-2. IEEE, (2019)Advanced MOS Device Technology for Low Power Logic LSI., , , , , , , , , и . MIXDES, стр. 26-33. IEEE, (2019)