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Impact of Hot Carrier Degradation on the Performances of Current Mirrors based on a 55 nm BiCMOS Integrated Circuit Technology., , , and . ESSDERC, page 251-254. IEEE, (2021)Collector-substrate modeling of SiGe HBTs up to THz range., , , , , and . BCICTS, page 1-4. IEEE, (2019)Measurement based accurate definition of the SOA edges for SiGe HBTs., , , and . BCICTS, page 1-4. IEEE, (2019)HICUM/L2: Extensions over the last decade., , , , and . BCICTS, page 1-4. IEEE, (2020)230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications., , , , , , , , , and 7 other author(s). IEEE J. Solid State Circuits, 40 (10): 2025-2034 (2005)Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands., , , , , , , , , and 9 other author(s). BCICTS, page 187-190. IEEE, (2023)Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance., , , , , , , , , and 1 other author(s). BCICTS, page 1-7. IEEE, (2021)A two-step de-embedding method valid up to 110 GHz., , , , , , and . ICM, page 1-4. IEEE, (2017)Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo., , , , and . ESSDERC, page 70-73. IEEE, (2017)Implementation and quality testing for compact models implemented in Verilog-A., , , , and . DATE, page 403-408. IEEE, (2016)