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Single Event Resilient Dynamic Logic Designs.

H. Wang, M. Li, L. Chen, R. Liu, S. Baeg, S. Wen, R. Wong, R. Fung, and J. Bi. J. Electron. Test., 30 (6): 751-761 (2014)

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Jinshun Zhao

Bi Wu

Hongguang Bi

Bi Yu

Shasha Bi

Other publications of authors with the same name

Ultrathin HfO2/Al2O3 bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing.Q. Wang, Y. Wang, R. Luo, J. Wang, L. Ji, Z. Jiang, C. Wenger, Z. Song, S. Song, W. Ren and 2 other author(s). Neuromorph. Comput. Eng., 2 (4): 44012 (December 2022)SEU reduction effectiveness of common centroid layout in differential latch at 130-nm CMOS technology.H. Wang, A. Sheng, S. Wang, J. Bi, L. Chen, and X. Liu. Microelectron. Reliab., (2017)Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations.L. Fan, J. Bi, K. Xi, S. Majumdar, and B. Li. Sensors, 20 (10): 2751 (2020)Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions.X. Yang, Y. Xu, J. Bi, K. Xi, L. Fan, L. Ji, and G. Xu. Sci. China Inf. Sci., 65 (6): 1-2 (2022)Total ionizing dose effects on graphene-based charge-trapping memory.K. Xi, J. Bi, S. Majumdar, B. Li, J. Liu, Y. Xu, and M. Liu. Sci. China Inf. Sci., 62 (12): 222401 (2019)Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design.J. Wang, J. Bi, G. Liu, H. Bai, K. Xi, B. Li, S. Majumdar, L. Ji, M. Liu, and Z. Zhang. Sci. China Inf. Sci., (2021)Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations.L. Fan, J. Bi, K. Xi, and G. Yan. Sensors, 20 (14): 3946 (2020)Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.G. Yan, J. Bi, G. Xu, K. Xi, B. Li, L. Fan, and H. Yin. IEEE Access, (2020)Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory.J. Bi, Y. Duan, K. Xi, and B. Li. Microelectron. Reliab., (2018)The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices.T. Zhang, B. Allard, and J. Bi. Microelectron. Reliab., (2018)

BibSonomy

Disambiguation of "Bi, Jinshun"

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Single Event Resilient Dynamic Logic Designs.

Please choose a person to relate this publication to

Jinshun Zhao

Bi Wu

Hongguang Bi

Bi Yu

Shasha Bi

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Bi, Jinshun"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Single Event Resilient Dynamic Logic Designs.

Please choose a person to relate this publication to

Jinshun Zhao

Bi Wu

Hongguang Bi

Bi Yu

Shasha Bi

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
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Single Event Resilient Dynamic Logic Designs.