Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

ROBIN: Monolithic-3D SRAM for Enhanced Robustness with In-Memory Computation Support., , , , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 66-I (7): 2533-2545 (2019)High-performance low-energy STT MRAM based on balanced write scheme., , and . ISLPED, page 9-14. ACM, (2012)Device/circuit interactions at 22nm technology node., , and . DAC, page 97-102. ACM, (2009)Read-enhanced spin memories augmented by phase transition materials (Invited)., and . MWSCAS, page 993-996. IEEE, (2017)Independently-Controlled-Gate FinFET 6T SRAM Cell Design for Leakage Current Reduction and Enhanced Read Access Speed., , , , , , , and . ISVLSI, page 296-301. IEEE Computer Society, (2014)Comparative Evaluation of Memory Technologies for Synaptic Crossbar Arrays- Part 2: Design Knobs and DNN Accuracy Trends., , and . CoRR, (2024)An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires., , , and . ICICDT, page 117-120. IEEE, (2018)Valley-Coupled-Spintronic Non-Volatile Memories with Compute-In-Memory Support., , , , , , , , and . CoRR, (2019)Exploiting ferroelectric FETs for low-power non-volatile logic-in-memory circuits., , , , , , and . ICCAD, page 121. ACM, (2016)FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy., , , , , , , , and . DRC, page 1-2. IEEE, (2023)