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Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

W. Chen, X. Ma, B. Hou, S. Zhao, J. Zhu, J. Zhang, and Y. Hao. Microelectron. Reliab., 54 (6-7): 1293-1298 (2014)

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Jie Zhu

Zhou Jie

Yucheng Jie

Jie Ding

Jie Liu

Other publications of authors with the same name

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs.R. Ye, X. Cai, C. Du, H. Liu, Y. Zhang, X. Duan, and J. Zhu. IEEE Access, (2022)Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.J. Zhu, B. Hou, L. Chen, Q. Zhu, L. Yang, X. Zhou, P. Zhang, X. Ma, and Y. Hao. IRPS, page 1. IEEE, (2018)Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.Q. Zhu, X. Ma, B. Hou, M. Wu, J. Zhu, L. Yang, M. Zhang, and Y. Hao. IEEE Access, (2020)Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.Y. Chen, Q. Zhu, J. Zhu, M. Mi, M. Zhang, Y. Zhou, Z. Zhao, X. Ma, and Y. Hao. Sci. China Inf. Sci., (February 2023)Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.S. Liu, X. Ma, J. Zhu, M. Mi, J. Guo, J. Liu, Y. Chen, Q. Zhu, L. Yang, and Y. Hao. Sci. China Inf. Sci., (2022)Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.W. Chen, X. Ma, B. Hou, S. Zhao, J. Zhu, J. Zhang, and Y. Hao. Microelectron. Reliab., 54 (6-7): 1293-1298 (2014)Design of Integrated Error Compensating System for the Portable Flexible CMMs.Q. Cao, J. Zhu, Z. Gao, and G. Xiong. CCTA (4), volume 347 of IFIP Advances in Information and Communication Technology, page 410-419. Springer, (2010)An optic-fiber fence intrusion recognition system using the optimized curve fitting model based on the SVM method.N. He, J. Zhu, and L. Li. IJCNN, page 1-6. IEEE, (2018)Affine Legendre Moment Invariants for Image Watermarking Robust to Geometric Distortions.H. Zhang, H. Shu, G. Coatrieux, J. Zhu, Q. Wu, Y. Zhang, H. Zhu, and L. Luo. IEEE Trans. Image Processing, 20 (8): 2189-2199 (2011)Targeted estimation of heterogeneous treatment effect in observational survival analysis.J. Zhu, and B. Gallego. J. Biomed. Informatics, (2020)

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Disambiguation of "Zhu, Jie-Jie"

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Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

Please choose a person to relate this publication to

Jie Zhu

Zhou Jie

Yucheng Jie

Jie Ding

Jie Liu

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zhu, Jie-Jie"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

Please choose a person to relate this publication to

Jie Zhu

Zhou Jie

Yucheng Jie

Jie Ding

Jie Liu

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.